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| AP2851GO Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Performance TSSOP-8 D1 S1 S2 D2 S2 G2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) S1 G1 30V 40m 5A -30V 80m -3.3A ID P-CH BVDSS RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 20 5 3.9 20 1.38 0.01 -55 to 150 -55 to 150 P-channel -30 20 -3.3 -2.7 -20 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200817041 AP2851GO N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.03 7 6 2 4 8 7 14 3 450 100 70 Max. Units 40 60 3 1 25 100 10 720 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=5A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V IS=5A, VGS=0V dI/dt=100A/s Min. - Typ. 17 11 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP2851GO P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.03 4 5 0.8 3 8 6 20 4 430 90 60 Max. Units 80 120 -3 -1 -25 100 8 910 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-3A VGS=-4.5V, ID=-2A VDS=VGS, ID=-250uA VDS=-10V, ID=-3A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-3A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.2A, VGS=0V IS=-3A, VGS=0V dI/dt=-100A/s Min. - Typ. 20 19 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 208/W when mounted on min. copper pad. AP2851GO N-Channel 30 30 T A =25 C o 10V 7.0V 5.0V 20 T A = 150 o C 10V 7.0V ID , Drain Current (A) 20 5.0V 4.5V 10 ID , Drain Current (A) 4.5V 10 V G =3.0V 0 0 1 2 3 4 V G =3.0V 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 65 1.6 60 ID=3A T A =25 o C Normalized RDS(ON) 1.4 I D =5A V G =10V 55 RDS(ON) (m ) 1.2 50 45 1.0 40 0.8 35 30 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 5 4 1.5 3 IS(A) T j =150 o C 2 T j =25 o C Normalized VGS(th) (V) 1.2 1.0 0.5 1 0 0 0.2 0.4 0.6 0.8 1 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2851GO N-Channel f=1.0MHz 14 1000 12 VGS , Gate to Source Voltage (V) ID=5A V DS = 24 V C iss 10 8 C (pF) 100 C oss C rss 6 4 2 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 10 0.2 100us 1ms ID (A) 1 Normalized Thermal Response (Rthja) 0.1 0.1 0.05 0.02 0.01 10ms 100ms 0.1 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =208o C/W T A =25 o C Single Pulse 0.01 0.1 1 10 1s 10s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP2851GO P-Channel 20 20 T A =25 C -ID , Drain Current (A) 15 o -10V -7.0V -ID , Drain Current (A) 15 -10V T A = 150 o C -7.0V -5.0V -4.5V 10 -5.0V 10 -4.5V 5 5 V G =-3.0V V G =-3.0V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.6 110 I D = -2 A T A =25 C o 1.4 ID=-3A V G = - 10V 100 Normalized R DS(ON) RDS(ON) (m ) 1.2 90 1.0 80 0.8 70 60 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 4 -IS(A) o T j =150 C 2 T j =25 o C Normalized -VGS(th) (V) 3 1.5 1.0 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2851GO P-Channel f=1.0MHz 12 1000 10 -VGS , Gate to Source Voltage (V) I D =- 3 A V DS =-24V C iss 8 C (pF) 6 100 C oss C rss 4 2 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 10 0.2 0.1 0.1 0.05 1ms -ID (A) 1 10ms 100ms 0.1 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208oC/W T A =25 o C Single Pulse 1s 10s DC 10 100 0.01 0.1 1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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